Dislocation mechanism of interface point defect migration
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منابع مشابه
Formation, migration, and clustering of delocalized vacancies and interstitials at a solid-state semicoherent interface
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Atomistic simulations are used to study the formation, migration, and clustering of delocalized vacancies and inter...
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تاریخ انتشار 2010